Resistance Switching and Formation of a Conductive Bridge in Metal/Binary Oxide/Metal Structure for Memory Devices

被引：141

作者：

Fujiwara, Kohei ^{[1
,2
,3
]}

Nemoto, Takumi ^{[1
,2
]}

Rozenberg, Marcelo J. ^{[1
,2
,4
]}

Nakamura, Yoshinobu ^{[1
,2
]}

Takagi, Hidenori ^{[1
,2
,3
,5
]}

机构：

[1] Univ Tokyo, Dept Adv Mat, Chiba 2778561, Japan

[2] Univ Tokyo, Dept Appl Chem, Chiba 2778561, Japan

[3] RIKEN Inst Phys & Chem Res, Saitama 3510198, Japan

[4] Univ Paris Sud, Phys Solides Lab, F-91405 Orsay, France

[5] Natl Inst Adv Ind Sci & Technol, CERC, Tsukuba, Ibaraki 3058562, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 08期

基金：

日本学术振兴会;

关键词：

ReRAM; resistance switching; memory effect; dielectric breakdown; reduction-oxidation; CuO;

D O I：

10.1143/JJAP.47.6266

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The resistance switching mechanism of a metal/CuO/metal sandwich with a planar device structure has been studied. We report the direct observation of a conducting bridge within the CuO channel of the device, which is formed upon the initial voltage application (forming process). It is found that the resistance switching phenomenon only occurs when just a single bridge is formed during a soft dielectric breakdown. We argue that the reduction and oxidation of this conducting bridge by the action of an applied field and/or current gives rise to a novel nonvolatile memory effect.

引用

页码：6266 / 6271

页数：6

共 40 条

[1] Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses [J].