Spatially extended nature of resistive switching in perovskite oxide thin films

被引：88

作者：

Chen, Xin ^{[1
]}

Wu, NaiJuan ^{[1
]}

Strozier, John ^{[1
]}

Ignatiev, Alex ^{[1
]}

机构：

[1] Univ Houston, Ctr Adv Mat, Houston, TX 77204 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 06期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1063/1.2236213

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report the direct observation of the electric pulse induced resistance-change effect at the nanoscale on La1-xSrxMnO3 thin films by the current measurement of the atomic force microscopy (AFM) technique. After a switching voltage of one polarity is applied across the sample by the AFM tip, the conductivity in a local nanometer region around the AFM tip is increased, and after a switching voltage of the opposite polarity is applied, the local conductivity is reduced. This reversible resistance switching effect is observed under both continuous and short-pulse-voltage switching conditions. It is important for future nanoscale nonvolatile memory device applications. (c) 2006 American Institute of Physics.

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页数：3

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共 15 条

[1] Strain-induced metal-insulator phase coexistence in perovskite manganites [J].

Ahn, KH ;

Lookman, T ;

Bishop, AR .

NATURE, 2004, 428 (6981) :401-404

[2] Electric-pulse-induced reflectance change in the thin film of perovskite manganite [J].

Aoyama, K ;

Waku, K ;

Asanuma, A ;

Uesu, Y ;

Katsufuji, T .

APPLIED PHYSICS LETTERS, 2004, 85 (07) :1208-1210

[3] Field-driven hysteretic and reversible resistive switch at the Ag-Pr0.7Ca0.3MnO3 interface [J].

Baikalov, A ;

Wang, YQ ;

Shen, B ;

Lorenz, B ;

Tsui, S ;

Sun, YY ;

Xue, YY ;

Chu, CW .

APPLIED PHYSICS LETTERS, 2003, 83 (05) :957-959

[4] Direct resistance profile for an electrical pulse induced resistance change device [J].

Chen, X ;

Wu, NJ ;

Strozier, J ;

Ignatiev, A .

APPLIED PHYSICS LETTERS, 2005, 87 (23) :1-3

[5] Complexity in strongly correlated electronic systems [J].

Dagotto, E .

SCIENCE, 2005, 309 (5732) :257-262

[6] Resistance switching in perovskite thin films [J].

Ignatiev, A. ;

Wu, N. J. ;

Chen, X. ;

Liu, S. Q. ;

Papagianni, C. ;

Strozier, J. .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2006, 243 (09) :2089-2097

[7] DEPENDENCE OF GIANT MAGNETORESISTANCE ON OXYGEN STOICHIOMETRY AND MAGNETIZATION IN POLYCRYSTALLINE LA0.67BA0.33MNOZ [J].

JU, HL ;

GOPALAKRISHNAN, J ;

PENG, JL ;

LI, Q ;

XIONG, GC ;

VENKATESAN, T ;

GREENE, RL .

PHYSICAL REVIEW B, 1995, 51 (09) :6143-6146

[8] Electric-pulse-induced reversible resistance change effect in magnetoresistive films [J].

Liu, SQ ;

Wu, NJ ;

Ignatiev, A .

APPLIED PHYSICS LETTERS, 2000, 76 (19) :2749-2751

[9] Electroluminescence from ZnSTe:Al alloy and an investigation of local current distributions by conducting atomic force microscopy [J].

Mao, JM ;

Sou, IK ;

Xu, JB ;

Wilson, IH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (01) :14-18

[10] Electrical transport and glassy response in strained thin La0.7Ca0.3MnO3 films -: art. no. 134414 [J].

Markovich, V ;

Vlakhov, ES ;

Yuzhelevskii, Y ;

Blagoev, B ;

Nenkov, KA ;

Gorodetsky, G .

PHYSICAL REVIEW B, 2005, 72 (13)