Direct resistance profile for an electrical pulse induced resistance change device

被引：85

作者：

Chen, X ^{[1
]}

Wu, NJ ^{[1
]}

Strozier, J ^{[1
]}

Ignatiev, A ^{[1
]}

机构：

[1] Univ Houston, Texas Ctr Adv Mat, Houston, TX 77204 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 23期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1063/1.2139843

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the direct microscale resistance profile measurements on a symmetric thin-film electrical pulse induced resistance change (EPIR) device composed of a Pa0.7Ca0.3MnO3 (PCMO) active layer, using surface scanning Kelvin probe microscopy. The resistance switching is found to be an integration of the resistance changes from three parts of the device: the two interface regions within similar to 1-3 mu m of the electrical contacts, and the bulk PCMO material. Such a symmetric EPIR device showed a "table leg" resistance switching hysteresis loop under electric pulsing at room temperature. The symmetric EPIR device may be used as a resistive random access memory nonvolatile memory device with different operation modes by controlling electric pulse voltage. (c) 2005 Americian Institute of Physics.

引用

页码：1 / 3

页数：3

共 12 条

[1] Electric-pulse-induced reflectance change in the thin film of perovskite manganite [J].