Material aspects in emerging nonvolatile memories

被引：82

作者：

Pinnow, CU ^{[1
]}

Mikolajick, T

机构：

[1] Infineon Technol, Memory Prod Technol Dev New Memory Platforms Inno, D-81541 Munich, Germany

[2] Infineon Technol Dresden, Memory Dev Ctr, Technol Innovat, D-01099 Dresden, Germany

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2004年 / 151卷 / 06期

关键词：

D O I：

10.1149/1.1740785

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

In this paper, the ongoing research and development activities on future nonvolatile memory technologies incorporating new switching materials are described. Memory concepts based on switching effects in inorganic and organic materials as well as in single molecules and carbon nanotubes are reviewed. Examples of the typical aspects that must be covered during the development of a memory incorporating a new switching material are illustrated using the results from the development of a ferroelectric memory. (C) 2004 The Electrochemical Society.

引用

页码：K13 / K19

页数：7

共 55 条

[1]

[Anonymous], 2001, INT EL DEV M

[2] Reproducible switching effect in thin oxide films for memory applications [J].

Beck, A ;

Bednorz, JG ;

Gerber, C ;

Rossel, C ;

Widmer, D .

APPLIED PHYSICS LETTERS, 2000, 77 (01) :139-141

[3] FERROELECTRONIC RAM MEMORY FAMILY FOR CRITICAL DATA-STORAGE [J].

BONDURANT, D .

FERROELECTRICS, 1990, 112 :273-282

[4] Effect of barium contamination on gate oxide integrity in high-k dram [J].

Boubekeur, H ;

Mikolajick, T ;

Bauer, A ;

Frey, L ;

Ryssel, H .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2002, 303 (01) :12-16

[5]

Boubekeur H, 2001, INTEGR FERROELECTR, V37, P405, DOI 10.1080/10584580108015667

[6] Platinum contamination issues in ferroelectric memories [J].

Boubekeur, H ;

Mikolajick, T ;

Pamler, W ;

Höpfner, J ;

Frey, L ;

Ryssel, H .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (06) :3257-3265

[7] A [2]catenane-based solid state electronically reconfigurable switch [J].

Collier, CP ;

Mattersteig, G ;

Wong, EW ;

Luo, Y ;

Beverly, K ;

Sampaio, J ;

Raymo, FM ;

Stoddart, JF ;

Heath, JR .

SCIENCE, 2000, 289 (5482) :1172-1175

[8] Electronically configurable molecular-based logic gates [J].

Collier, CP ;

Wong, EW ;

Belohradsky, M ;

Raymo, FM ;

Stoddart, JF ;

Kuekes, PJ ;

Williams, RS ;

Heath, JR .

SCIENCE, 1999, 285 (5426) :391-394

[9] A low power 1Mbit MRAM based on 1T1MTJ bit cell integrated with Copper Interconnects [J].

Durlam, M ;

Naji, P ;

Omair, A ;

DeHerrera, M ;

Calder, J ;

Slaughter, JM ;

Engel, B ;

Rizzo, N ;

Grynkewich, G ;

Butcher, B ;

Tracy, C ;

Smith, K ;

Kyler, K ;

Ren, J ;

Molla, J ;

Feil, B ;

Williams, R ;

Tehrani, S .

2002 SYMPOSIUM ON VLSI CIRCUITS, DIGEST OF TECHNICAL PAPERS, 2002, :158-161

[10] Microstructured magnetic tunnel junctions [J].

Gallagher, WJ ;

Parkin, SSP ;

Lu, Y ;

Bian, XP ;

Marley, A ;

Roche, KP ;

Altman, RA ;

Rishton, SA ;

Jahnes, C ;

Shaw, TM ;

Xiao, G .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (08) :3741-3746

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