Investigation of the cleaved surface of a p-i-n laser using Kelvin probe force microscopy and two-dimensional physical simulations

被引：57

作者：

Robin, F ^{[1
]}

Jacobs, H ^{[1
]}

Homan, O ^{[1
]}

Stemmer, A ^{[1
]}

Bächtold, W ^{[1
]}

机构：

[1] ETH Ctr CLA, Inst Robot, Nanotechnol Grp, CH-8092 Zurich, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 20期

关键词：

D O I：

10.1063/1.126513

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the cross-sectional electric field and potential distribution of a cleaved n(+)-InP/InGaAsP/p(+)-InP p-i-n laser diode using Kelvin probe force microscopy (KFM) with a lateral resolution reaching 50 nm. The powerful characterization capabilities of KFM were compared with two-dimensional (2D) physics-based simulations. The agreement between simulations and KFM measurements regarding the main features of the electric field and potential is very good. However, the KFM yields a voltage drop between n- and p-doped InP regions which is 0.4 times the one simulated. This discrepancy is explained in terms of surface traps due to the exposure of the sample to the air and in terms of incomplete ionization. This hypothesis is confirmed by the 2D simulations. (C) 2000 American Institute of Physics. [S0003-6951(00)00620-3].

引用

页码：2907 / 2909

页数：3

共 16 条

[1] NANOMETER-SCALE IMAGING OF POTENTIAL PROFILES IN OPTICALLY-EXCITED N-I-P-I HETEROSTRUCTURE USING KELVIN PROBE FORCE MICROSCOPY [J].

CHAVEZPIRSON, A ;

VATEL, O ;

TANIMOTO, M ;

ANDO, H ;

IWAMURA, H ;

KANBE, H .

APPLIED PHYSICS LETTERS, 1995, 67 (21) :3069-3071

[2] FACET OXIDATION OF INGAASP/INP AND INGAAS/INP LASERS [J].

FUKUDA, M .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (11) :1692-1698

[3] DEEP LEVELS IN N-INP GROWN BY MOLECULAR-BEAM EPITAXY [J].

ILIADIS, AA ;

LAIH, SC ;

MARTIN, EA .

APPLIED PHYSICS LETTERS, 1989, 54 (15) :1436-1438

[4] Practical aspects of Kelvin probe force microscopy [J].

Jacobs, HO ;

Knapp, HF ;

Stemmer, A .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1999, 70 (03) :1756-1760

[5] Resolution and contrast in Kelvin probe force microscopy [J].

Jacobs, HO ;

Leuchtmann, P ;

Homan, OJ ;

Stemmer, A .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (03) :1168-1173

[6]

Jacobs HO, 1999, SURF INTERFACE ANAL, V27, P361, DOI 10.1002/(SICI)1096-9918(199905/06)27:5/6<361::AID-SIA482>3.0.CO

[7]

2-8

[8] Surface potential mapping: A qualitative material contrast in SPM [J].

Jacobs, HO ;

Knapp, HF ;

Muller, S ;

Stemmer, A .

ULTRAMICROSCOPY, 1997, 69 (01) :39-49

[9] SIMULATION OF IMPURITY FREEZE-OUT THROUGH NUMERICAL-SOLUTION OF POISSONS-EQUATION WITH APPLICATION TO MOS DEVICE BEHAVIOR [J].

JAEGER, RC ;

GAENSSLEN, FH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (05) :914-920

[10] SILICON PN JUNCTION IMAGING AND CHARACTERIZATIONS USING SENSITIVITY ENHANCED KELVIN PROBE FORCE MICROSCOPY [J].

KIKUKAWA, A ;

HOSAKA, S ;

IMURA, R .

APPLIED PHYSICS LETTERS, 1995, 66 (25) :3510-3512

← 1 2 →