DEEP LEVELS IN N-INP GROWN BY MOLECULAR-BEAM EPITAXY

被引：10

作者：

ILIADIS, AA

LAIH, SC

MARTIN, EA

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 15期

关键词：

D O I：

10.1063/1.100689

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1436 / 1438

页数：3

共 14 条

[1]

EAVES L, 1984, J APPL PHYS, V55, P3779

[2] INFLUENCE OF GROWTH-CONDITIONS ON UNDOPED AND SULFUR-DOPED INP GROWN BY MOLECULAR-BEAM EPITAXY [J].

ILIADIS, A ;

PRIOR, KA ;

STANLEY, CR ;

MARTIN, T ;

DAVIES, GJ .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (01) :213-218

[3]

INSUISHI M, 1983, THIN SOLID FILMS, V103, P141

[4] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[5]

LILE DL, 1984, J VAC SCI TECHNOL B, V2, P3496

[6] DEEP LEVEL TRANSIENT SPECTROSCOPY STUDY IN N-TYPE INP [J].

LIM, H ;

SAGNES, G ;

BASTIDE, G ;

ROUZEYRE, M .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) :3317-3320

[7] DEEP LEVELS IN INP GROWN BY MOCVD [J].

OGURA, M ;

MIZUTA, M ;

HASE, N ;

KUKIMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (04) :658-662

[8] AN OPTIMAL ANNEALING TECHNIQUE FOR OHMIC CONTACTS TO ION-IMPLANTED N-LAYERS IN SEMIINSULATING INDIUM-PHOSPHIDE [J].

PANDE, KP ;

MARTIN, E ;

GUTIERREZ, D ;

AINA, O .

SOLID-STATE ELECTRONICS, 1987, 30 (03) :253-258

[9] SIMS AND DLTS MEASUREMENTS ON FE-DOPED INP EPITAXIAL LAYERS GROWN BY MOCVD [J].

TAKANOHASHI, T ;

NAKAI, K ;

NAKAJIMA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (01) :L113-L115

[10] HIGH-QUALITY INP GROWN BY MOLECULAR-BEAM EPITAXY [J].

TSANG, WT ;

MILLER, RC ;

CAPASSO, F ;

BONNER, WA .

APPLIED PHYSICS LETTERS, 1982, 41 (05) :467-469

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