DEEP LEVELS IN INP GROWN BY MOCVD

被引：27

作者：

OGURA, M ^{[1
]}

MIZUTA, M ^{[1
]}

HASE, N ^{[1
]}

KUKIMOTO, H ^{[1
]}

机构：

[1] MATSUSHITA ELECT IND CO LTD,CENT RES LAB,MORIGUCHI,OSAKA 570,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1983年 / 22卷 / 04期

关键词：

D O I：

10.1143/JJAP.22.658

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：658 / 662

页数：5

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