SIMULATION OF IMPURITY FREEZE-OUT THROUGH NUMERICAL-SOLUTION OF POISSONS-EQUATION WITH APPLICATION TO MOS DEVICE BEHAVIOR

被引：71

作者：

JAEGER, RC ^{[1
]}

GAENSSLEN, FH ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 05期

关键词：

D O I：

10.1109/T-ED.1980.19956

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：914 / 920

页数：7

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