Surface potential profiling and contact resistance measurements on operating pentacene thin-film transistors by Kelvin probe force microscopy

被引:258
作者
Puntambekar, KP [1 ]
Pesavento, PV [1 ]
Frisbie, CD [1 ]
机构
[1] Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA
关键词
D O I
10.1063/1.1637443
中图分类号
O59 [应用物理学];
学科分类号
摘要
Surface potentials of operating pentacene thin-film transistors (TFTs) with two different contact geometries (bottom or top) were mapped by Kelvin probe force microscopy (KFM). The surface potential distribution was used to isolate the potential drops at the source and drain contacts. These potential drops were converted to resistances by dividing by the appropriate drain current values. The bottom contact TFTs were contact limited at large gate voltages, while the top contact TFTs were not contact limited. In both geometries, the contact and the channel resistances decreased strongly with increasing (negative) gate bias but did not depend strongly on the drain bias. This study demonstrates the utility of KFM for visualizing charge transport bottlenecks in operating pentacene devices and for correlating electrical behavior with device structure by comparison of surface potential and topographic maps. (C) 2003 American Institute of Physics.
引用
收藏
页码:5539 / 5541
页数:3
相关论文
共 22 条
[1]   Noncontact potentiometry of polymer field-effect transistors [J].
Bürgi, L ;
Sirringhaus, H ;
Friend, RH .
APPLIED PHYSICS LETTERS, 2002, 80 (16) :2913-2915
[2]   Formation of the accumulation layer in polymer field-effect transistors [J].
Bürgi, L ;
Friend, RH ;
Sirringhaus, H .
APPLIED PHYSICS LETTERS, 2003, 82 (09) :1482-1484
[3]  
Dimitrakopoulos CD, 2002, ADV MATER, V14, P99, DOI 10.1002/1521-4095(20020116)14:2<99::AID-ADMA99>3.0.CO
[4]  
2-9
[5]   Field effect conductance measurements on thin crystals of sexithiophene [J].
Granstrom, EL ;
Frisbie, CD .
JOURNAL OF PHYSICAL CHEMISTRY B, 1999, 103 (42) :8842-8849
[6]   Pentacene TFT with improved linear region characteristics using chemically modified source and drain electrodes [J].
Gundlach, DJ ;
Jia, LL ;
Jackson, TN .
IEEE ELECTRON DEVICE LETTERS, 2001, 22 (12) :571-573
[7]  
Hassenkam T, 2001, ADV MATER, V13, P631, DOI 10.1002/1521-4095(200105)13:9<631::AID-ADMA631>3.3.CO
[8]  
2-6
[9]   Practical aspects of Kelvin probe force microscopy [J].
Jacobs, HO ;
Knapp, HF ;
Stemmer, A .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1999, 70 (03) :1756-1760
[10]   Surface potential mapping: A qualitative material contrast in SPM [J].
Jacobs, HO ;
Knapp, HF ;
Muller, S ;
Stemmer, A .
ULTRAMICROSCOPY, 1997, 69 (01) :39-49