Noncontact potentiometry of polymer field-effect transistors

被引:301
作者
Bürgi, L [1 ]
Sirringhaus, H [1 ]
Friend, RH [1 ]
机构
[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
关键词
D O I
10.1063/1.1470702
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on high-resolution potentiometry of operating organic thin-film field-effect transistors by means of scanning Kelvin probe force microscopy. It is demonstrated that the measured potential reflects the electrostatic potential of the accumulation layer at the semiconductor/insulator interface. We present data revealing gate bias and lateral electric field dependence of the field-effect mobility in poly(hexylthiophene) at temperatures from 50 to 300 K. (C) 2002 American Institute of Physics.
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收藏
页码:2913 / 2915
页数:3
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共 20 条
  • [1] Kelvin probe force microscopy for potential distribution measurement of cleaved surface of GaAs devices
    Arakawa, M
    Kishimoto, S
    Mizutani, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (3B): : 1826 - 1829
  • [2] Large-scale complementary integrated circuits based on organic transistors
    Crone, B
    Dodabalapur, A
    Lin, YY
    Filas, RW
    Bao, Z
    LaDuca, A
    Sarpeshkar, R
    Katz, HE
    Li, W
    [J]. NATURE, 2000, 403 (6769) : 521 - 523
  • [3] High-performance all-polymer integrated circuits
    Gelinck, GH
    Geuns, TCT
    de Leeuw, DM
    [J]. APPLIED PHYSICS LETTERS, 2000, 77 (10) : 1487 - 1489
  • [4] Hassenkam T, 2001, ADV MATER, V13, P631, DOI 10.1002/1521-4095(200105)13:9<631::AID-ADMA631>3.3.CO
  • [5] 2-6
  • [6] Resolution and contrast in Kelvin probe force microscopy
    Jacobs, HO
    Leuchtmann, P
    Homan, OJ
    Stemmer, A
    [J]. JOURNAL OF APPLIED PHYSICS, 1998, 84 (03) : 1168 - 1173
  • [7] Gate voltage dependent resistance of a single organic semiconductor grain boundary
    Kelley, TW
    Frisbie, CD
    [J]. JOURNAL OF PHYSICAL CHEMISTRY B, 2001, 105 (20) : 4538 - 4540
  • [8] SILICON PN JUNCTION IMAGING AND CHARACTERIZATIONS USING SENSITIVITY ENHANCED KELVIN PROBE FORCE MICROSCOPY
    KIKUKAWA, A
    HOSAKA, S
    IMURA, R
    [J]. APPLIED PHYSICS LETTERS, 1995, 66 (25) : 3510 - 3512
  • [9] Cantilever effects on the measurement of electrostatic potentials by scanning Kelvin probe microscopy
    Koley, G
    Spencer, MG
    Bhangale, HR
    [J]. APPLIED PHYSICS LETTERS, 2001, 79 (04) : 545 - 547
  • [10] Frequency-dependent electrical response of holes in poly(p-phenylene vinylene)
    Martens, HCF
    Brom, HB
    Blom, PWM
    [J]. PHYSICAL REVIEW B, 1999, 60 (12): : R8489 - R8492