Resistance switching in perovskite thin films

被引：32

作者：

Ignatiev, A. ^{[1
]}

Wu, N. J. ^{[1
]}

Chen, X. ^{[1
]}

Liu, S. Q. ^{[1
]}

Papagianni, C. ^{[1
]}

Strozier, J. ^{[1
]}

机构：

[1] Univ Houston, Ctr Adv Mat, Houston, TX 77204 USA

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2006年 / 243卷 / 09期

关键词：

D O I：

10.1002/pssb.200666805

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Recent research on the resistance switching effect in manganite oxide based electric-pulse-induced resistance (EPIR) devices is being reviewed. The EPIR effect encompasses the reversible change of resistance of a thin oxide film such as Pr1-xCaxMnO3 (PCMO) under the application of short, low voltage pulses. Two groups of EPIR devices have been investigated: one with the PCMO layer sandwiched between a top and a bottom electrode; the other with both electrodes on top of the PCMO thin films, which were grown on insulating substrates. I-V switching characteristics, electric pulse switching hysteresis, as well as the dynamic resistance during nano second switching pulses of the EPIR devices were measured. Temperature studies showed similar activation energies for both high and low resistance states. Resistance profile microanalysis showed resistance switching both in the interface regions of the oxide film near the electrode, as well as in the bulk of PCMO film with the major resistance change from the interface regions. The resistance switching mechanism is discussed. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2089 / 2097

页数：9

共 9 条

[1] Direct resistance profile for an electrical pulse induced resistance change device [J].