Buffer-enhanced electrical-pulse-induced resistive memory effect in thin film perovskites

A multilayer perovskite thin-film resistive memory device composed of a Pr0.7Ca0.3MnO3 (PCMO) perovskite oxide epitaxial layer oil a YBa2Cu3O7-delta (YBCO) thin-film bottom electrode, a thin yttria-stabilized zirconia (YSZ) buffer layer grown on the PCMO layer, and a gold thin-film top electrode has been developed. With the addition of the YSZ buffer layer, the Pulse voltage needed to switch the device is significantly reduced and the resistance-switching ratio is increased compared to a non buffered resistive memory device, which is very important for device Fabrication. The magnetic field effect on the multilayer structure resistance at various temperatures shows colossal rnagnetoresistance (CMR) behavior for both high and low resistance states, implying a bulk material component in the switch behavior. The multilayer thin-film lattice structure has been further characterized by X-ray diffraction (XRD) and transmission electron rnicroscopy (TEM) analyses, which indicate a high-quality heterostructure. Current imaging atomic force microscopy (I-AFM) analysis indicated nanogranular conductivity distributed uniformly throughout the PCMO film surface.