Current-induced metastable resistive state in epitaxial thin films of La1-xCaxMnO3 (x=0.2,0.3) -: art. no. 092504

被引：67

作者：

Gao, J ^{[1
]}

Hu, FX ^{[1
]}

机构：

[1] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 09期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.1870128

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of a transport do current on electric resistivity has been investigated in epitaxial thin films of La1-xCaxMnO3 (x=0.2, 0.3). A most prominent finding is the appearance of a remarkable resistive peak at temperatures well below the Curie temperature T, Such a resistive peak is developed when the do current over a critical value was applied in a temperature cycling from 300 to 10 K. The resistance peak turns out to be extremely sensitive to a weak current. Even a very small current could greatly depress the height of the peak. Such a current-induced state with high resistivity is metastable compared to the pristine state. The stability of the induced state has been also studied. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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