Theory of electric-field-induced metal-insulator transition in doped manganites

被引：33

作者：

Gu, RY ^{[1
]}

Wang, ZD

Ting, CS

机构：

[1] Univ Houston, Texas Ctr Superconduct, Houston, TX 77204 USA

[2] Univ Houston, Dept Phys, Houston, TX 77204 USA

[3] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China

来源：

PHYSICAL REVIEW B | 2003年 / 67卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.67.153101

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The insulator to metal transition (IMT) induced by the application of an electric field in doped manganites is investigated theoretically. Starting from the double-exchange mechanism with the long-range Coulomb interaction included, we find that the electric field may suppress the charge ordering and drive the system from the antiferromagnetic and charge-ordered state with an energy gap at the Fermi level to the ferromagnetic and gapless state, resulting in the IMT. A numerical simulation is performed for manganite films with intrinsic inhomogeneities, and an important impact of the inhomogeneities on this electric-field-induced transition is obtained. Our results can naturally account for the recently observed electric-filed-induced IMT phenomenon in manganites.

引用

页数：4

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