A nonvolatile 2-Mbit CBRAM memory core featuring advanced read and program control

被引：74

作者：

Dietrich, Stefan ^{[1
]}

Angerbauer, Michael

Ivanov, Milena

Gogl, Dietmar

Hoenigschmid, Heinz

Kund, Michael

Liaw, Corvin

Markert, Michael

Symanczyk, Ralf

Altimime, Laith

Bournat, Serge

Mueller, Gerhard

机构：

[1] Qimonda AG, D-85579 Neubiberg, Germany

[2] Altis Semicond, F-91105 Corbeil Essonnes, France

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2007年 / 42卷 / 04期

关键词：

1T1CBJ; CBRAM; program; universal memory;

D O I：

10.1109/JSSC.2007.892207

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 2-Mbit CBRAM (Conductive Bridging Random Access Memory) core has been developed utilizing a 90 nm, VDD = 1.5 V process technology. The presented design uses an 8F(2) (0.0648 mu m(2)) 1T1CBJ (1-Transistor/1-Conductive Bridging junction) cell and introduces a fast feedback regulated CBJ read voltage and a novel program charge control using dummy cell bleeder devices. Random read/write cycle times <= 50 ns are demonstrated.

引用

页码：839 / 845

页数：7