In situ transmission electron microscopy analysis of conductive filament during solid electrolyte resistance switching

被引：75

作者：

Fujii, Takashi ^{[1
]}

Arita, Masashi ^{[1
]}

Takahashi, Yasuo ^{[1
]}

Fujiwara, Ichiro ^{[2
]}

机构：

[1] Hokkaido Univ, Grad Sch Informat Sci & Technol, Sapporo, Hokkaido 0600814, Japan

[2] Semicond Technol Acad Res Ctr, Kohoku Ku, Yokohama, Kanagawa 2220033, Japan

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 21期

关键词：

MEMORY;

D O I：

10.1063/1.3593494

中图分类号：

O59 [应用物理学];

学科分类号：

070305 [高分子化学与物理];

摘要：

An in situ transmission electron microscopy (TEM) analysis of a solid electrolyte, Cu-GeS, during resistance switching is reported. Real-time observations of the filament formation and disappearance process were performed in the TEM instrument and the conductive-filament-formation model was confirmed experimentally. Narrow conductive filaments were formed corresponding to resistance switching from high- to low-resistance states. When the resistance changed to high- resistance state, the filament disappeared. It was also confirmed by use of selected area diffractometry and energy-dispersive x-ray spectroscopy that the conductive filament was made of nanocrystals composed mainly of Cu. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3593494]

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