I-V hysteresis of Pr0.7Ca0.3MnO3 during TEM observation

被引：19

作者：

Fujii, T. ^{[1
]}

Kaji, H. ^{[1
]}

Kondo, H. ^{[1
]}

Hamada, K. ^{[1
]}

Arita, M. ^{[1
]}

Takahashi, Y. ^{[1
]}

机构：

[1] Hokkaido Univ, Grad Sch Informat Sci & Technol, Sapporo, Hokkaido 0600814, Japan

来源：

FUNDAMENTALS AND TECHNOLOGY OF MULTIFUNCTIONAL OXIDE THIN FILMS (SYMPOSIUM G, EMRS 2009 SPRING MEETING) | 2010年 / 8卷

关键词：

D O I：

10.1088/1757-899X/8/1/012033

中图分类号：

T [工业技术];

学科分类号：

120111 [工业工程];

摘要：

Conduction measurements with simultaneous transmission electron microscopy (TEM) were performed on thin Pr0.7Ca0.3MnO3 (PCMO) films deposited on tip-shaped Pt-Ir electrodes. A movable counter electrode was used to choose nanoscale region with contact areas smaller than 180 nm(2) for investigation. The corresponding I-V data from this region showed a hysteresis curve which is characteristic to the material usable in resistance random access memories. In TEM images of PCMO before and after the measurement, no remarkable changes inside PCMO such as the formation of conducting path were recognized.

引用

收藏

页数：4

相关论文

共 12 条

[1]

Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses [J].

Baek, IG ;

Lee, MS ;

Seo, S ;

Lee, MJ ;

Seo, DH ;

Suh, DS ;

Park, JC ;

Park, SO ;

Kim, HS ;

Yoo, IK ;

Chung, UI ;

Moon, JT .

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, :587-590

[2]

Resistance Switching and Formation of a Conductive Bridge in Metal/Binary Oxide/Metal Structure for Memory Devices [J].

Fujiwara, Kohei ;

Nemoto, Takumi ;

Rozenberg, Marcelo J. ;

Nakamura, Yoshinobu ;

Takagi, Hidenori .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (08) :6266-6271

[3]

In situ conductance measurement of a limited number of nanoparticles during transmission electron microscopy observation [J].

Hirose, R ;

Arita, M ;

Hamada, K ;

Takahashi, Y ;

Subagyo, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (24-27) :L790-L792

[4]

Hirose R, 2003, MAT SCI ENG C-BIO S, V23, P927, DOI 10.1016/S0928-4931(03)00214-5

[5]

Kaji H, 2009, EMRS SPRING M, pG5

[6]

Electric-pulse-induced reversible resistance change effect in magnetoresistive films [J].

Liu, SQ ;

Wu, NJ ;

Ignatiev, A .

APPLIED PHYSICS LETTERS, 2000, 76 (19) :2749-2751

[7]

Evidence for an oxygen diffusion model for the electric pulse induced resistance change effect in transition-metal oxides [J].

Nian, Y. B. ;

Strozier, J. ;

Wu, N. J. ;

Chen, X. ;

Ignatiev, A. .

PHYSICAL REVIEW LETTERS, 2007, 98 (14)

[8]

Observation of electric-field induced Ni filament channels in polycrystalline NiOx film [J].

Park, Gyeong-Su ;

Li, Xiang-Shu ;

Kim, Dong-Chirl ;

Jung, Ran-Ju ;

Lee, Myoung-Jae ;

Seo, Sunae .

APPLIED PHYSICS LETTERS, 2007, 91 (22)

[9]

Hysteretic current-voltage characteristics and resistance switching at a rectifying Ti/Pr0.7Ca0.3MnO3 interface [J].

Sawa, A ;

Fujii, T ;

Kawasaki, M ;

Tokura, Y .

APPLIED PHYSICS LETTERS, 2004, 85 (18) :4073-4075

[10]

Resistive switching in transition metal oxides [J].

Sawa, Akihito .

MATERIALS TODAY, 2008, 11 (06) :28-36