Electric pulse induced resistance change effect in manganites due to polaron localization at the metal-oxide interfacial region

被引:50
作者
Jooss, Ch. [1 ]
Hoffmann, J. [1 ]
Fladerer, J. [1 ]
Ehrhardt, M. [1 ]
Beetz, T. [2 ]
Wu, L. [2 ]
Zhu, Y. [2 ]
机构
[1] Univ Gottingen, Inst Mat Phys, D-37077 Gottingen, Germany
[2] Brookhaven Natl Lab, Dept Condensed Matter Phys & Mat Sci, Upton, NY 11973 USA
关键词
D O I
10.1103/PhysRevB.77.132409
中图分类号
T [工业技术];
学科分类号
08 [工学];
摘要
Combining pulse-probe measurements as well as local transport measurements in an electron microscope system by a simultaneous monitoring of the structural changes, we show that the nonvolatile electric pulse induced resistance change in Ca-doped praseodymium manganite is related to a polaron order-disorder transition, modified by electronic band bending in the vicinity of an interface to a metallic electrode. A pronounced resistance change requires a critical distance between the two electrode and/or oxide interfaces to form an insulating incommensurate polaron-ordered phase during the initialization of the device. Based on these observations, a qualitative model for the electronic structure of the metal-oxide interface is developed.
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页数:4
相关论文
共 23 条
[1]
Field-driven hysteretic and reversible resistive switch at the Ag-Pr0.7Ca0.3MnO3 interface [J].
Baikalov, A ;
Wang, YQ ;
Shen, B ;
Lorenz, B ;
Tsui, S ;
Sun, YY ;
Xue, YY ;
Chu, CW .
APPLIED PHYSICS LETTERS, 2003, 83 (05) :957-959
[2]
Spatially extended nature of resistive switching in perovskite oxide thin films [J].
Chen, Xin ;
Wu, NaiJuan ;
Strozier, John ;
Ignatiev, Alex .
APPLIED PHYSICS LETTERS, 2006, 89 (06)
[3]
Colossal magnetoresistant materials: The key role of phase separation [J].
Dagotto, E ;
Hotta, T ;
Moreo, A .
PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 2001, 344 (1-3) :1-153
[4]
Giant resistance switching in metal-insulator-manganite junctions: Evidence for Mott transition [J].
Fors, R ;
Khartsev, SI ;
Grishin, AM .
PHYSICAL REVIEW B, 2005, 71 (04)
[5]
Resistance switching in perovskite thin films [J].
Ignatiev, A. ;
Wu, N. J. ;
Chen, X. ;
Liu, S. Q. ;
Papagianni, C. ;
Strozier, J. .
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2006, 243 (09) :2089-2097
[6]
NEUTRON-DIFFRACTION STUDY OF PR1-XCAXMNO3 PEROVSKITES [J].
JIRAK, Z ;
KRUPICKA, S ;
SIMSA, Z ;
DLOUHA, M ;
VRATISLAV, S .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1985, 53 (1-2) :153-166
[7]
Polaron melting and ordering as key mechanisms for colossal resistance effects in manganites [J].
Jooss, Ch. ;
Wu, L. ;
Beetz, T. ;
Klie, R. F. ;
Beleggia, M. ;
Schofield, M. A. ;
Schramm, S. ;
Hoffmann, J. ;
Zhu, Y. .
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2007, 104 (34) :13597-13602
[8]
DEPENDENCE OF GIANT MAGNETORESISTANCE ON OXYGEN STOICHIOMETRY AND MAGNETIZATION IN POLYCRYSTALLINE LA0.67BA0.33MNOZ [J].
JU, HL ;
GOPALAKRISHNAN, J ;
PENG, JL ;
LI, Q ;
XIONG, GC ;
VENKATESAN, T ;
GREENE, RL .
PHYSICAL REVIEW B, 1995, 51 (09) :6143-6146
[9]
Giant and stable conductivity switching behaviors in ZrO2 films deposited by pulsed laser depositions [J].
Kim, S ;
Byun, I ;
Hwang, I ;
Kim, J ;
Choi, J ;
Park, BH ;
Seo, S ;
Lee, MJ ;
Seo, DH ;
Suh, DS ;
Joung, YS ;
Yoo, IK .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (8-11) :L345-L347
[10]
Electric-pulse-induced reversible resistance change effect in magnetoresistive films [J].
Liu, SQ ;
Wu, NJ ;
Ignatiev, A .
APPLIED PHYSICS LETTERS, 2000, 76 (19) :2749-2751