Giant and stable conductivity switching behaviors in ZrO2 films deposited by pulsed laser depositions

被引：20

作者：

Kim, S

Byun, I

Hwang, I

Kim, J

Choi, J

Park, BH ^{[1
]}

Seo, S

Lee, MJ

Seo, DH

Suh, DS

Joung, YS

Yoo, IK

机构：

[1] Konkuk Univ, Dept Phys, Seoul 143701, South Korea

[2] Samsung Adv Inst Technol, Suwon 440600, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 8-11期

关键词：

ZrO2 thin films; conductivity switching; on/off ratio; endurance; Schottky-type conduction;

D O I：

10.1143/JJAP.44.L345

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZrO2 films have been deposited on Pt/Ti/SiO2/Si substrates by pulsed laser deposition methods. Giant and stable conductivity switching behaviors with maximum on/off ratio of 10(6) and switching endurance of 10(5) times are observed in a typical Pt/ZrO2/Pt structure. The Pt/ZRO(2)/Pt structure exhibits two ohmic behaviors in the low-voltage region (V < 1.4 V) depending on the value of previously applied voltage and Schottky-type conduction in the high-voltage region (1.4V < V < 8.9 V). It seems that the conductivity switching behaviors result from the changes in both the Schottky barrier and the bulk conductivity controlled by applied voltages.

引用

页码：L345 / L347

页数：3

共 12 条

[1]

SWITCHING PHENOMENA IN TITANIUM OXIDE THIN FILMS [J].