Tuning the electrical properties of zirconium oxide thin films

被引：68

作者：

Cho, BO ^{[1
]}

Wang, J ^{[1
]}

Sha, L ^{[1
]}

Chang, JP ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Chem Engn, Los Angeles, CA 90095 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 06期

关键词：

D O I：

10.1063/1.1448667

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZrO2 films obtained using plasma-enhanced chemical-vapor deposition exhibit various electrical properties tuned by the flow rate ratio of O-2 to precursor-carrying Ar (O-2/Ar), which controls the hydrocarbon incorporation in the films and the interfacial layer formation. As-deposited ZrO2 films obtained in oxygen-rich plasmas (O-2/Argreater than or equal to1) showed good electrical properties, including an overall dielectric constant of 16, a flatband voltage shift of -24 mV, an interfacial trap density of similar to10(11) cm(-2) eV(-1), and a leakage current density of 3.3x10(-6) A/cm(2) at an equivalent oxide thickness of 25 Angstrom, suitable for metal-oxide-semiconductor device applications. (C) 2002 American Institute of Physics.

引用

页码：1052 / 1054

页数：3

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