CHARACTERIZATION OF ZIRCONIUM DIOXIDE FILM FORMED BY PLASMA-ENHANCED METAL-ORGANIC CHEMICAL-VAPOR DEPOSITION

被引：39

作者：

KIM, ET

YOON, SG

机构：

[1] Chungnam Natl Univ, Taejon, Korea, Republic of

来源：

THIN SOLID FILMS | 1993年 / 227卷 / 01期

关键词：

11;

D O I：

10.1016/0040-6090(93)90179-S

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Zirconium dioxide films were deposited on Si substrates by a plasma enhanced metal-organic chemical vapor deposition process involving the application of vapor mixtures of Zr(tfacac)4 and oxygen. Rutherford backscattering spectroscopy (RBS) and Auger electron spectroscopy analyses were performed to determine the chemical composition of ZrO2 films and the carbon contamination in ZrO2 films respectively. RBS analysis revealed that stoichiometry was obtained in zirconia films deposited at 295-degrees-C. The film obtained at 265-degrees-C has an amorphous structure and above 265-degrees-C a monoclinic structure. The deposition rate of the ZrO2 films was strongly affected by competition with atomic mobility and etching by the chemical complex of activated fluorine with increasing deposition temperatures.

引用

页码：7 / 12

页数：6

共 11 条

[1]

BALOG M, 1977, THIN SOLID FILMS, V41, P247, DOI 10.1016/0040-6090(77)90312-1

[2] THIN-FILMS OF ZRO2 METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J].