THIN-FILMS OF ZRO2 METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION

被引：9

作者：

BENDOR, L ^{[1
]}

ELSHTEIN, A ^{[1
]}

HALABI, S ^{[1
]}

PINSKY, I ^{[1
]}

SHAPPIR, J ^{[1
]}

机构：

[1] HEBREW UNIV JERUSALEM,SCH APPL SCI & TECHNOL,MICROELECTR LAB,IL-91904 JERUSALEM,ISRAEL

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1984年 / 13卷 / 02期

关键词：

D O I：

10.1007/BF02656679

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：263 / 272

页数：10

共 9 条

[1]

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[2]

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[3] SURFACE-POTENTIAL RELAXATION IN A BIASED HG1-XCDX TE METAL-INSULATOR-SEMICONDUCTOR CAPACITOR [J].

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APPLIED PHYSICS LETTERS, 1983, 42 (03) :290-292

[4]

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[5] RECOLLECTIONS AND REFLECTIONS OF MO-CVD [J].

MANASEVIT, HM .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :1-9

[6]

MORRIS ML, 1969, INORG SYNTHESIS, V9, P50

[7] QUADRUPLY SELF-ALIGNED STACKED HIGH-CAPACITANCE RAM USING TA2O5 HIGH-DENSITY VLSI DYNAMIC MEMORY [J].

OHTA, K ;

YAMADA, K ;

SHIMIZU, K ;

TARUI, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (03) :368-376

[8]

SLADEK KJ, 1973, 3RD P INT C CHEM VAP, P215

[9] PREPARATION AND PROPERTIES OF PYROLYTIC ZIRCONIUM DIOXIDE FILMS [J].

TAUBER, RN ;

DUMBRI, AC ;

CAFFREY, RE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (05) :747-&

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