SURFACE-POTENTIAL RELAXATION IN A BIASED HG1-XCDX TE METAL-INSULATOR-SEMICONDUCTOR CAPACITOR

被引：4

作者：

DAUGHERTY, M

JANOUSEK, BK

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 03期

关键词：

D O I：

10.1063/1.93883

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：290 / 292

页数：3

共 12 条

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