Characterization of zirconia coatings deposited by inductively coupled plasma assisted chemical vapor deposition

被引：15

作者：

Colpo, P ^{[1
]}

Ceccone, G ^{[1
]}

Sauvageot, P ^{[1
]}

Baker, M ^{[1
]}

Rossi, F ^{[1
]}

机构：

[1] European Commiss, Joint Res Ctr, Inst Hlth & Consumer Protect, I-21021 Ispra, VA, Italy

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2000年 / 18卷 / 04期

关键词：

D O I：

10.1116/1.582306

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Thin films of zirconia have been deposited by an inductively coupled plasma assisted chemical vapor deposition reactor from a tetra (tert-butoxy)-zircon precursor diluted in Ar and O-2 gas mixture. An independent rf generator is used to carefully control the substrate negative bias voltage during the deposition. Zirconia thin films, with thickness up to 10 mu m were deposited on Si(100) polished wafers under different plasma conditions. Correlation between deposition parameters and microstructure has been established showing that the ion bombardment has a large influence on the coating characteristics. In particular, the possibility of tailoring mechanical properties of the films by controlling the applied de bias voltage is discussed. (C) 2000 American Vacuum Society. [S0734-2101(00)14304-0].

引用

页码：1096 / 1101

页数：6

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