ZIRCONIA THIN-FILM DEPOSITION ON SILICON BY REACTIVE GAS-FLOW SPUTTERING - THE INFLUENCE OF LOW-ENERGY PARTICLE BOMBARDMENT

被引：18

作者：

JUNG, T

WESTPHAL, A

机构：

[1] Akademie der Wissenschaften der D.D.R., Zentralinstitut für Elektronenphysik, Rudower Chaussee 5

来源：

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 1991年 / 140卷

关键词：

D O I：

10.1016/0921-5093(91)90474-2

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Zirconia (ZrO2) thin films have been deposited on Si(100) substrates with a new film deposition method, reactive gas flow sputtering, which enables very low energy ion bombardment during film growth. The influence of argon ion bombardment in the energy range 0-30 eV on the film properties was studied by X-ray diffraction, Auger analysis and ellipsometry. Both the structure and stoichiometry of the film were found to respond in a highly sensitive manner to small ion energy shifts in several steps. The ion bombardment effects may be related to differences in bonding strength of the amorphous and crystalline (monoclinic and tetragonal) structures of ZrO2.

引用

页码：528 / 533

页数：6

共 8 条

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