I-V measurement of NiO nanoregion during observation by transmission electron microscopy

被引：19

作者：

Fujii, Takashi ^{[1
]}

Arita, Masashi ^{[1
]}

Hamada, Kouichi ^{[1
]}

Kondo, Hirofumi ^{[1
]}

Kaji, Hiromichi ^{[1
]}

Takahashi, Yasuo ^{[1
]}

Moniwa, Masahiro ^{[2
]}

Fujiwara, Ichiro ^{[2
]}

Yamaguchi, Takeshi ^{[2
]}

Aoki, Masaki ^{[2
]}

Maeno, Yoshinori ^{[2
]}

Kobayashi, Toshio ^{[2
]}

Yoshimaru, Masaki ^{[2
]}

机构：

[1] Hokkaido Univ, Grad Sch Informat Sci & Technol, Sapporo, Hokkaido 0600814, Japan

[2] Semicond Technol Acad Res Ctr, Kohoku Ku, Yokohama, Kanagawa 222003, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 109卷 / 05期

基金：

日本学术振兴会;

关键词：

GOLD ATOMS; CONDUCTANCE; TRANSITION; MEMORY;

D O I：

10.1063/1.3553868

中图分类号：

O59 [应用物理学];

学科分类号：

070305 [高分子化学与物理];

摘要：

Conduction measurements with simultaneous observations by transmission electron microscopy (TEM) were performed on a thin NiO film, which is a candidate material for resistance random access memories (ReRAMs). To conduct nanoscale experiments, a piezo-controlled TEM holder was used, where a fixed NiO sample and a movable Pt-Ir counter electrode were placed. After the counter electrode was moved to make contact with NiO, I-V measurements were carried out from any selected nanoregions. By applying a voltage of 2 V, the insulating NiO film was converted to a low resistance film. This phenomenon may be the "forming process" required to initialize ReRAMs. The corresponding TEM image indicated a structural change in the NiO layer generating a conductive bridge with a width of 30-40 nm. This finding supports the "breakdown" type forming in the so-called "filament model" of operation by ReRAMs. The inhomogeneity of resistance in the NiO film was also investigated. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3553868]

引用

页数：5

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