Effect of electrode and interface oxide on the property of ReRAM composed of Pr0.7Ca0.3MnO3

被引：21

作者：

Kaji, H. ^{[1
]}

Kondo, H. ^{[1
]}

Fujii, T. ^{[1
]}

Arita, M. ^{[1
]}

Takahashi, Y. ^{[1
]}

机构：

[1] Hokkaido Univ, Grad Sch Informat Sci & Technol, Sapporo, Hokkaido 060, Japan

来源：

FUNDAMENTALS AND TECHNOLOGY OF MULTIFUNCTIONAL OXIDE THIN FILMS (SYMPOSIUM G, EMRS 2009 SPRING MEETING) | 2010年 / 8卷

关键词：

FILMS;

D O I：

10.1088/1757-899X/8/1/012032

中图分类号：

T [工业技术];

学科分类号：

120111 [工业工程];

摘要：

The current-voltage (I-V) characteristics of resistance random access memories (ReRAM) composed of the [top electrode]/Pr0.7Ca0.3MnO3(PCMO)/Pt structure were investigated by using Au, Pt, Ag, Cr, Mo and W needles as top electrodes against the PCMO layer. Reproducible resistance switching can be recognized in devices using Cr, Mo and W. Devices using Mo and W electrode showed two type of characteristics: (A) resistance change from low resistance state to high resistance state by positive bias voltage and (B) vice versa. Since the surfaces of these needles may be oxidized, we took account of the effect by the surface oxide. To check this assumption, we annealed the W needles and Mo needles in air and investigated I-V characteristics without the PCMO layer. As a result, the characteristic-(B) was classified to be induced by a surface oxide. Meanwhile, the characteristic-(A) is from PCMO. The existence of the interface oxide between top electrode and PCMO seems to decide the type of characteristics and to influence the reproducibility of the ReRAM property.

引用

页数：4

共 16 条

[1]

Field-driven hysteretic and reversible resistive switch at the Ag-Pr0.7Ca0.3MnO3 interface [J].

Baikalov, A ;

Wang, YQ ;

Shen, B ;

Lorenz, B ;

Tsui, S ;

Sun, YY ;

Xue, YY ;

Chu, CW .

APPLIED PHYSICS LETTERS, 2003, 83 (05) :957-959

[2]

Chein W-C, 2008, EXT ABSTR SSDM, P1170

[3]

Chen X, 2003, APPL PHYS LETT, V85, P957

[4]

Oxidation kinetics of Ni metallic films: Formation of NiO-based resistive switching structures [J].

Courtade, L. ;

Turquat, Ch. ;

Muller, Ch. ;

Lisoni, J. G. ;

Goux, L. ;

Wouters, D. J. ;

Goguenheim, D. ;

Roussel, P. ;

Ortega, L. .

THIN SOLID FILMS, 2008, 516 (12) :4083-4092

[5]

Resistive switching properties of high crystallinity and low-resistance Pr0.7Ca0.3MnO3 thin film with point-contacted Ag electrodes [J].

Fujimoto, Masayuki ;

Koyama, Hiroshi ;

Nishi, Yuji ;

Suzuki, Toshimasa .

APPLIED PHYSICS LETTERS, 2007, 91 (22)

[6]

Resistance Switching and Formation of a Conductive Bridge in Metal/Binary Oxide/Metal Structure for Memory Devices [J].

Fujiwara, Kohei ;

Nemoto, Takumi ;

Rozenberg, Marcelo J. ;

Nakamura, Yoshinobu ;

Takagi, Hidenori .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (08) :6266-6271

[7]

Trap-controlled space-charge-limited current mechanism in resistance switching at Al/Pr0.7Ca0.3MnO3 interface [J].

Harada, T. ;

Ohkubo, I. ;

Tsubouchi, K. ;

Kumigashira, H. ;

Ohnishi, T. ;

Lippmaa, M. ;

Matsumoto, Y. ;

Koinuma, H. ;

Oshima, M. .

APPLIED PHYSICS LETTERS, 2008, 92 (22)

[8]

Effect of top electrode on resistance switching of (Pr, Ca)MnO3 thin films [J].

Kim, Chang Jung ;

Chen, I-Wei .

THIN SOLID FILMS, 2006, 515 (04) :2726-2729

[9]

Categorization of resistive switching of metal-Pr0.7Ca0.3MnO3-metal devices [J].

Liao, Z. L. ;

Wang, Z. Z. ;

Meng, Y. ;

Liu, Z. Y. ;

Gao, P. ;

Gang, J. L. ;

Zhao, H. W. ;

Liang, X. J. ;

Bai, X. D. ;

Chen, D. M. .

APPLIED PHYSICS LETTERS, 2009, 94 (25)

[10]

Electric-pulse-induced reversible resistance change effect in magnetoresistive films [J].

Liu, SQ ;

Wu, NJ ;

Ignatiev, A .

APPLIED PHYSICS LETTERS, 2000, 76 (19) :2749-2751

← 1 2 →