Resistive switching properties of high crystallinity and low-resistance Pr0.7Ca0.3MnO3 thin film with point-contacted Ag electrodes

被引：58

作者：

Fujimoto, Masayuki

Koyama, Hiroshi

Nishi, Yuji

Suzuki, Toshimasa

机构：

[1] Shizuoka Univ, Grad Sch Elect Sci & Technol, Shizuoka 4328561, Japan

[2] Taiyo Yuden Co, Gunma 3703347, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 22期

关键词：

14;

D O I：

10.1063/1.2816124

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A high-crystallinity, low-resistance Pr0.7Ca0.3MnO3(PCMO) thin film deposited by sputtering at 600 degrees C showed no resistive switching with a Pt/Pr0.7Ca0.3MnO3/Pt structure but a remarkable bipolar resistive switching with a Ag paste/Pr0.7Ca0.3MnO3/Pt structure. Observed retention fatigue of the low-resistance state was almost saturated after 24 h. The resistive switching properties were characterized as point contact of Ag grains to PCMO thin film. It was also found that the interface can form interfacial trap states and resistive change active layers. This strongly suggests that the function of the Ag point contact is similar to those of the previously proposed filament path and the nanodomain switch. (C) 2007 American Institute of Physics.

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