Resistivity and resistive switching properties of Pr0.7Ca0.3MnO3 thin films

被引：22

作者：

Fujimoto, Masayuki

Koyama, Hiroshi

Kobayashi, Shinji

Tamai, Yukio

Awaya, Nobuyoshi

Nishi, Yuji

Suzuki, Toshimasa

机构：

[1] Shizuoka Univ, Grad Sch Sci & Technol, Hamamatsu, Shizuoka 4328561, Japan

[2] Sharp Co Ltd, Tenri, Nara 6328567, Japan

[3] Taiyo Yuden Co, Gunma 3703347, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 24期

关键词：

D O I：

10.1063/1.2404592

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors studied the relationship between electrical resistivity and resistive switching properties in various stoichiometric and nonstoichiometric Pr1-xCaxMnO3 (PCMO) (x=0.3) thin films fabricated by pulsed laser deposition. The resistivity of Pt/PCMO/Pt structured thin films depended mainly on the PCMO deposition temperature, which was related to the crystallinity of the thin films. The highest resistivity was obtained from the lowest deposition temperature (300 degrees C) specimen, and it was amorphous, while higher temperature deposition specimens (500-800 degrees C) showed specific crystallographic orientation depending on the deposition temperature but showed quite low resistivity. Amorphous film deposited at 350 degrees C exhibited monopolar resistive switching when pulses were applied. (c) 2006 American Institute of Physics.

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共 14 条

[1] Field-driven hysteretic and reversible resistive switch at the Ag-Pr0.7Ca0.3MnO3 interface [J].

Baikalov, A ;

Wang, YQ ;

Shen, B ;

Lorenz, B ;

Tsui, S ;

Sun, YY ;

Xue, YY ;

Chu, CW .

APPLIED PHYSICS LETTERS, 2003, 83 (05) :957-959

[2] Retention behavior of the electric-pulse-induced reversible resistance change effect in Ag-La0.7Ca0.3MnO3-Pt sandwiches -: art. no. 172107 [J].

Dong, R ;

Wang, Q ;

Chen, LD ;

Shang, DS ;

Chen, TL ;

Li, XM ;

Zhang, WQ .

APPLIED PHYSICS LETTERS, 2005, 86 (17) :1-3

[3] Giant resistance switching in metal-insulator-manganite junctions: Evidence for Mott transition [J].

Fors, R ;

Khartsev, SI ;

Grishin, AM .

PHYSICAL REVIEW B, 2005, 71 (04)

[4] Charge ordering in Pr0.5Ca0.5MnO3 thin films:: A new form initiated by strain effects of LaAlO3 substrate [J].

Haghiri-Gosnet, AM ;

Hervieu, M ;

Simon, C ;

Mercey, B ;

Raveau, B .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (06) :3545-3551

[5] Metal-insulator transitions [J].

Imada, M ;

Fujimori, A ;

Tokura, Y .

REVIEWS OF MODERN PHYSICS, 1998, 70 (04) :1039-1263

[6] Colossal electroresistance of a Pr0.7Ca0.3MnO3 thin film at room temperature -: art. no. 224403 [J].

Odagawa, A ;

Sato, H ;

Inoue, IH ;

Akoh, H ;

Kawasaki, M ;

Tokura, Y ;

Kanno, T ;

Adachi, H .

PHYSICAL REVIEW B, 2004, 70 (22) :224403-1

[7] Spectacular decrease of the melting magnetic field in the charge-ordered state of Pr0.5Ca0.5MnO3 films under tensile strain [J].

Prellier, W ;

Haghiri-Gosnet, AM ;

Mercey, B ;

Lecoeur, P ;

Hervieu, M ;

Simon, C ;

Raveau, B .

APPLIED PHYSICS LETTERS, 2000, 77 (07) :1023-1025

[8] Thickness dependence of the stability of the charge-ordered state in Pr0.5Ca0.5MnO3 thin films [J].

Prellier, W ;

Simon, C ;

Haghiri-Gosnet, AM ;

Mercey, B ;

Raveau, B .

PHYSICAL REVIEW B, 2000, 62 (24) :R16337-R16340

[9] Nonvolatile memory with multilevel switching: A basic model [J].

Rozenberg, MJ ;

Inoue, IH ;

Sánchez, MJ .

PHYSICAL REVIEW LETTERS, 2004, 92 (17) :178302-1

[10] Correlation of large dielectric response with the ordering transitions in Pr0.67Ca0.33MnO3 [J].

Saraf, LV ;

Ogale, SB ;

Chen, Z ;

Godfrey, RP ;

Venkatesan, T ;

Ramesh, R .

PHYSICAL REVIEW B, 2000, 62 (18) :11961-11964