Colossal electroresistance of a Pr0.7Ca0.3MnO3 thin film at room temperature -: art. no. 224403

被引：272

作者：

Odagawa, A ^{[1
]}

Sato, H

Inoue, IH

Akoh, H

Kawasaki, M

Tokura, Y

Kanno, T

Adachi, H

机构：

[1] Natl Inst Adv Ind Sci & Technol AIST, CERC, Tsukuba, Ibaraki 3058562, Japan

[2] Matsushita Elect Ind Co Ltd, ATRL, Kyoto 6190237, Japan

[3] Japan Sci & Technol Agcy, CREST, Kawaguchi, Japan

[4] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[5] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan

来源：

PHYSICAL REVIEW B | 2004年 / 70卷 / 22期

关键词：

D O I：

10.1103/PhysRevB.70.224403

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electronic conduction through a Pr0.7Ca0.3MnO3 thin film is investigated by measurements using dc and pulsed biases. Semiconducting Pr0.7Ca0.3MnO3 films sandwiched by electrodes show both hysteretic and asymmetric behaviors in current-voltage characteristics. The observed conduction characteristics exhibit the space-charge-limited-current effect, and the hysteretic behavior can be ascribed to a carrier trapping and detrapping of the trap sites in the manganite. The hysteresis induces a colossal electroresistance (CER) of more than 5000% at room temperature. The CER ratio is independent of the duration time of pulses from an infinite (dc) down to 150 ns, indicating that the carrier filling of all the traps can be completed within a short time.

引用

页码：224403 / 1

页数：4

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