Categorization of resistive switching of metal-Pr0.7Ca0.3MnO3-metal devices

被引：96

作者：

Liao, Z. L. ^{[1
]}

Wang, Z. Z. ^{[1
]}

Meng, Y. ^{[1
]}

Liu, Z. Y. ^{[1
]}

Gao, P. ^{[1
]}

Gang, J. L. ^{[1
]}

Zhao, H. W. ^{[1
]}

Liang, X. J. ^{[1
]}

Bai, X. D. ^{[1
]}

Chen, D. M. ^{[1
]}

机构：

[1] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 25期

基金：

美国国家科学基金会;

关键词：

aluminium; calcium compounds; electrical resistivity; electrodes; free energy; MIM devices; oxidation; praseodymium compounds; sandwich structures; tantalum; thin films; titanium; transmission electron microscopy; RESISTANCE; FILMS;

D O I：

10.1063/1.3159471

中图分类号：

O59 [应用物理学];

学科分类号：

070305 [高分子化学与物理];

摘要：

Resistive switching (RS) characteristics of a Pr0.7Ca0.3MnO3 (PCMO) film sandwiched between a Pt bottom electrode and top electrodes (TE) made of various metals are found to belong to two categories. Devices with TE made of Al, Ti, and Ta exhibit a large I-V hysteresis loop and bipolar RS, but those with TE made of Pt, Ag, Au, and Cu do not. Transmission electron microscopy reveals that a thin metal-oxide layer formed at the interface between the former group of TE and PCMO, but not for the latter group of TE. Analysis shows that the categorization depends on the Gibbs free energy of oxidation of the TEs with respect to that of PCMO.

引用

页数：3

共 24 条

[1]

[Anonymous], UNPUB

[2]

Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition -: art. no. 033715 [J].