Electric-field-induced resistance switching universally observed in transition-metal-oxide thin films

被引：89

作者：

Hamaguchi, M ^{[1
]}

Aoyama, K ^{[1
]}

Asanuma, S ^{[1
]}

Uesu, Y ^{[1
]}

Katsufuji, T ^{[1
]}

机构：

[1] Waseda Univ, Dept Phys, Tokyo 1698555, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 14期

关键词：

D O I：

10.1063/1.2193328

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We show that polarity-dependent, nonvolatile resistance switching by electric field occurs in the thin film of various transition-metal oxides in almost the same manner. This result indicates that, contrary to the general acceptance, perovskite manganite is by no means a special compound for this phenomenon. It is also suggested that the resistance switching is not dominated by a detailed electronic structure of each sample, but dominated by a more general origin, e.g., crystalline defect. (c) 2006 American Institute of Physics.

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