Epitaxial growth and electronic structure of LaTiOx films

被引：120

作者：

Ohtomo, A ^{[1
]}

Muller, DA ^{[1
]}

Grazul, JL ^{[1
]}

Hwang, HY ^{[1
]}

机构：

[1] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 21期

关键词：

D O I：

10.1063/1.1481767

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

LaTiOx films have been grown on (001) perovskite oxide substrates by pulsed-laser deposition. Both single-phase perovskite LaTiO3 and layered La2Ti2O7 films could be stabilized by varying the oxygen partial pressure and substrate temperature during growth. We have obtained a crystallographic and electronic phase diagram for LaTiOx films, demonstrating the ability to vary the titanium valence from 3+ to 4+ in thermodynamically unfavorable growth conditions by utilizing interface energies. (C) 2002 American Institute of Physics.

引用

页码：3922 / 3924

页数：3

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