Mott transition field effect transistor

被引：174

作者：

Newns, DM ^{[1
]}

Misewich, JA ^{[1
]}

Tsuei, CC ^{[1
]}

Gupta, A ^{[1
]}

Scott, BA ^{[1
]}

Schrott, A ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 06期

关键词：

D O I：

10.1063/1.121999

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A field effect transistor fabricated with an oxide channel has been shown to demonstrate switching characteristics similar to conventional silicon metal oxide field effect transistors. This device is believed to operate via a Mott metal-insulator transition induced by the gate field, and offers a potential technology alternative for the regime beyond silicon scaling limitations. (C) 1998 American Institute of Physics.

引用

页码：780 / 782

页数：3

共 31 条

[1] MEASUREMENT AND THERMODYNAMIC ANALYSES OF THE DIELECTRIC-CONSTANT OF EPITAXIALLY GROWN SRTIO3 FILMS [J].

ABE, K ;

KOMATSU, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (8B) :L1157-L1159

[2] SHORT-CHANNEL MODELS AND SCALING LIMITS OF SOI AND BULK MOSFETS [J].

AGRAWAL, B ;

DE, VK ;

PIMBLEY, JM ;

MEINDL, JD .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1994, 29 (02) :122-125

[3] FERROELECTRIC FIELD-EFFECT IN EPITAXIAL THIN-FILM OXIDE SRCUO2/PB(ZR0.52TI0.48)O-3 HETEROSTRUCTURES [J].

AHN, CH ;

TRISCONE, JM ;

ARCHIBALD, N ;

DECROUX, M ;

HAMMOND, RH ;

GEBALLE, TH ;

FISCHER, O ;

BEASLEY, MR .

SCIENCE, 1995, 269 (5222) :373-376

[4]

[Anonymous], 1990, METAL INSULATOR TRAN

[5] LAYER-BY-LAYER DEPOSITION OF LA1.85SR0.15CUOX FILMS BY PULSED LASER ABLATION [J].

CHERN, MY ;

GUPTA, A ;

HUSSEY, BW .

APPLIED PHYSICS LETTERS, 1992, 60 (24) :3045-3047

[6] DIELECTRIC-PROPERTIES OF SPUTTERED SRTIO3 FILMS [J].

CHRISTEN, HM ;

MANNHART, J ;

WILLIAMS, EJ ;

GERBER, C .

PHYSICAL REVIEW B, 1994, 49 (17) :12095-12104

[7] PHYSICAL PHENOMENA AND LIMITATIONS IN SUBMICROMETER MOSFETS [J].

DIKE, RSU .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1994, 76 (03) :403-415

[8] SCALING THE MOS-TRANSISTOR BELOW 0.1 MU-M - METHODOLOGY, DEVICE STRUCTURES, AND TECHNOLOGY REQUIREMENTS [J].

FIEGNA, C ;

IWAI, H ;

WADA, T ;

SAITO, M ;

SANGIORGI, E ;

RICCO, B .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (06) :941-951

[9] IIA-7 MONTE-CARLO SIMULATIONS OF P-CHANNEL AND N-CHANNEL DUAL-GATE SI MOSFETS AT THE LIMITS OF SCALING [J].

FRANK, DJ ;

LAUX, SE ;

FISCHETTI, MV .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (11) :2103-2103

[10] EFFECT OF ATOMIC OXYGEN ON THE INITIAL GROWTH MODE IN THIN EPITAXIAL CUPRATE FILMS [J].

FREY, T ;

CHI, CC ;

TSUEI, CC ;

SHAW, T ;

BOZSO, F .

PHYSICAL REVIEW B, 1994, 49 (05) :3483-3491

← 1 2 3 4 →