EFFECT OF ATOMIC OXYGEN ON THE INITIAL GROWTH MODE IN THIN EPITAXIAL CUPRATE FILMS

被引:63
作者
FREY, T
CHI, CC
TSUEI, CC
SHAW, T
BOZSO, F
机构
[1] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights
来源
PHYSICAL REVIEW B | 1994年 / 49卷 / 05期
关键词
D O I
10.1103/PhysRevB.49.3483
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The basic growth mode of a thin epitaxial cuprate film ( < 200 Angstrom) on a given substrate depends sensitively on the balance between various thermodynamic and kinetic factors related to the high-T-c phase formation and the surface microstructure at the growth front of the deposited film. Under the standard optimized growth conditions for high-quality epitaxial films, the deposition of a YBa2Cu3O7-delta film on an atomically smooth (110) SrTi0(3) substrate, for example, is characterized by a strong damping in the reflection high-energy electron diffraction (RHEED) oscillation suggesting a predominant island growth mode. We have demonstrated that with an atomic oxygen and the technique of RHEED-controlled growth interruption it is possible to minimize surface roughness and to fabricate unit-cell smooth YBa2Cu3O7-delta films over a large area (similar to 0.5 cmX1 cm). The results of this study suggest that two-dimensional layer growth can be induced by the combined use of atomic oxygen and growth conditions, such as low deposition rate, low oxygen partial pressure (<2 mTorr), that produce low supersaturation at the growth front.
引用
收藏
页码:3483 / 3491
页数:9
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