Growth and characterization of ferroelectric LaTiO3.5 thin films

被引：34

作者：

Fompeyrine, J ^{[1
]}

Seo, JW

Locquet, JP

机构：

[1] IBM Corp, Div Res, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland

[2] Univ Neuchatel, Inst Phys, CH-2000 Neuchatel, Switzerland

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 1999年 / 19卷 / 6-7期

关键词：

films; electron microscopy; X-ray methods; ferroelectric properties; perovskites;

D O I：

10.1016/S0955-2219(98)00463-4

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Depending upon the oxygen content x, LaTiO3+x can be a semiconductor, a metal, or a ferroelectric at room temperature. Using a thin-film approach, it is in principle possible to adjust the oxygen content in the growth direction and thus tune the electronic properties within the same sample. We report here on a systematic study of the epitaxial growth of LaTiO3.5 films on SrTiO3 (110) substrates using molecular beam epitaxy. The epitaxial behaviour and the growth mechanism of these films have been investigated by means of X-ray diffraction, transmission electron microscopy, and in situ reflection high-energy electron diffraction analysis. (C) 1999 Elsevier Science Limited. All rights reserved.

引用

页码：1493 / 1496

页数：4

共 13 条

[1] X-RAY STUDY OF DEFICIENT PEROVSKITE LA2-3TIO3 [J].

ABE, M ;

UCHINO, K .

MATERIALS RESEARCH BULLETIN, 1974, 9 (02) :147-155

[2] POSSIBLE HIGH-TC SUPERCONDUCTIVITY IN THE BA-LA-CU-O SYSTEM [J].

BEDNORZ, JG ;

MULLER, KA .

ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1986, 64 (02) :189-193

[3]

BONTCHEV R, 1993, EUR J SOL STATE INOR, V30, P521

[4] MAGNETORESISTANCE IN MAGNETIC MANGANESE OXIDE WITH INTRINSIC ANTIFERROMAGNETIC SPIN STRUCTURE [J].

CHAHARA, K ;

OHNO, T ;

KASAI, M ;

KOZONO, Y .

APPLIED PHYSICS LETTERS, 1993, 63 (14) :1990-1992

[5]

DICKERSON BD, 1995, MATER RES SOC SYMP P, V361, P197

[6] LANTHANUM DITITANATE [J].

GASPERIN, M .

ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE, 1975, 31 (AUG15) :2129-2130

[7] PHASE-DIAGRAM OF LATIOX - FROM 2D LAYERED FERROELECTRIC INSULATOR TO 3D WEAK FERROMAGNETIC SEMICONDUCTOR [J].

LICHTENBERG, F ;

WIDMER, D ;

BEDNORZ, JG ;

WILLIAMS, T ;

RELLER, A .

ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1991, 82 (02) :211-216

[8] BLOCK-BY-BLOCK DEPOSITION OF COMPLEX OXIDE-FILMS [J].

LOCQUET, JP ;

MACHLER, E .

MRS BULLETIN, 1994, 19 (09) :39-43

[9] The magnetic response at the metal-insulator transition in La1-xSrxTiO3 [J].

Osborn, R ;

Aronson, MC ;

Goremychkin, EA ;

Greedan, JE .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (08) :6432-6432

[10] FABRICATION OF LA2TI2O7 THIN-FILMS BY A SOL-GEL TECHNIQUE [J].

PRASADARAO, AV ;

SELVARAJ, U ;

KOMARNENI, S ;

BHALLA, AS .

FERROELECTRICS LETTERS SECTION, 1992, 14 (3-4) :65-72

← 1 2 →