Enhancement of Switching Capability on Bipolar Resistance Switching Device with Ta/Pr0.7Ca0.3MnO3/Pt Structure

被引：41

作者：

Kawano, Hiroyasu ^{[1
]}

Shono, Keiji ^{[1
]}

Yokota, Takeshi ^{[2
]}

Gomi, Manabu ^{[2
]}

机构：

[1] Fujitsu Labs Ltd, Akashi, Hyogo 6748555, Japan

[2] Nagoya Inst Technol, Showa Ku, Nagoya, Aichi 4668555, Japan

来源：

APPLIED PHYSICS EXPRESS | 2008年 / 1卷 / 10期

关键词：

D O I：

10.1143/APEX.1.101901

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We found that Pr0.7Ca0.3MnO3 (PCMO) film sandwiched by a Ta top electrode (TE) and a Pt bottom electrode (BE) exhibited bipolar resistance switching similar to that of Ti(TE)/PCMO/Pt(BE). The switching capability of Ta/PCMO/Pt was greatly improved by pulse-forming compared to dc-forming, which are both pre-treatments to enable resistance switching by pulsed voltage. Switching speeds faster than 100 ns and rewrite cycles of more than 10,000 were obtained while maintaining a ratio of resistance change larger than 1,000%. The mechanism of resistance switching was explained by an oxidation/reduction reaction at the Ta/PCMO interface, as previously proposed for Ti/PCMO/Pt. (c) 2008 The Japan Society of Applied Physics

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页码：1019011 / 1019013

页数：3

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