Electroforming and resistance-switching mechanism in a magnetite thin film

被引：77

作者：

Odagawa, A. ^{[1
]}

Katoh, Y. ^{[1
]}

Kanzawa, Y. ^{[1
]}

Wei, Z. ^{[1
]}

Mikawa, T. ^{[1
]}

Muraoka, S. ^{[1
]}

Takagi, T. ^{[1
]}

机构：

[1] Matsushita Elect ind Co Ltd, Adv Device Dev Ctr, Osaka 570, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 13期

关键词：

D O I：

10.1063/1.2789178

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electroforming and the resistance-switching behaviors in magnetite, Fe3O4, by the application of an appropriate electric field are demonstrated on a lateral device with multiple electrodes. By means of this device, both the location and the nature of the change in Fe3O4 are specified from the electrical measurements and Raman spectroscopy. The switching phenomenon is caused in maghemite, gamma-Fe2O3, which is formed by oxidation of Fe3O4, near an interface of an anode. The authors argue that the switching motion is originated in a redox reaction between the Fe3O4 and gamma-Fe2O3. (C) 2007 American Institute of Physics.

引用

页数：3

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