Resistance switching memory device with a nanoscale confined current path

被引：30

作者：

Ogimoto, Yasushi ^{[1
]}

Tamai, Yukio

Kawasaki, Masashi

Tokura, Yoshinori

机构：

[1] Sharp Co Ltd, Adv Mat Technol Res Labs, Fukuyama, Hiroshima 7218522, Japan

[2] Natl Inst Adv Ind Sci & Technol, CERC, Tsukuba, Ibaraki 3058562, Japan

[3] Tohoku Univ, Mat Res Inst, Sendai, Miyagi 9808577, Japan

[4] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 14期

关键词：

OXIDE-FILMS; SIO2;

D O I：

10.1063/1.2720747

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The impact of a nanoscale confined current path is demonstrated on a resistance switching memory device. The memory element consists of a Ti layer constricted by an insulating self-assembly nanogap oxide, in which a redox reaction is anticipated for the resistance change without an aid of a forming process. The device exhibits a resistance ratio greater than 100, a data retention longer than 3.7x10(6) s, an endurance of more than 2000 cycles, and a switching operation temperature up to 125 degrees C at an operation condition of +/- 2.5 V with 50-100 ns duration, evidencing an essential role of the nanostructure on the device performance. (c) 2007 American Institute of Physics.

引用

页数：3

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