Nitridation impact on thin oxide charge trapping

Aim of this work is the electrical characterization of thin oxides obtained with different nitridation processes in either N2O or NO ambient performed in a furnace right after the steam oxidation. Oxide quality in term of charge to breakdown and charge trapping has been analyzed. A correlation between nitrogen concentration in the film and electrical performances has been observed only within the same nitridation technology. In the case of N2O nitridation process a much lower N concentration yields comparable charge trapping characteristics, meaning that different N- related bonds within the film are obtained with N2O or NO nitridation.