p-channel thin-film transistor using p-type oxide semiconductor, SnO

被引：607

作者：

Ogo, Yoichi ^{[1
]}

Hiramatsu, Hidenori ^{[2
]}

Nomura, Kenji ^{[2
]}

Yanagi, Hiroshi ^{[1
]}

Kamiya, Toshio ^{[1
,2
]}

Hirano, Masahiro ^{[2
]}

Hosono, Hideo ^{[1
,2
]}

机构：

[1] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[2] Tokyo Inst Technol, Frontier Res Ctr, JST, ERATO SORST,Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 03期

关键词：

D O I：

10.1063/1.2964197

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper reports that among known p-type oxide semiconductors, tin monoxide (SnO) has a high hole mobility and produces good p-type oxide thin-film transistors (TFTs). Device-quality SnO films were grown epitaxially on (001) yttria-stabilized zirconia substrates at 575 degrees C by pulsed laser deposition. These exhibited a Hall mobility of 2.4 cm(2) V-1 s(-1) at room temperature. Top-gated TFTs, using epitaxial SnO channels, exhibited field-effect mobilities of 1.3 cm(2) V-1 s(-1), on/off current ratios of similar to 10(2), and threshold voltages of 4.8 V.

引用

页数：3

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