Circuits using uniform TFTs based on amorphous In-Ga-Zn-O

被引：118

作者：

Hayashi, Ryo ^{[1
]}

Ofuji, Masato ^{[1
]}

Kaji, Nobuyuki ^{[1
]}

Takahashi, Kenji ^{[1
]}

Abe, Katsumi ^{[1
]}

Yabuta, Hisato ^{[1
]}

Sano, Masafumi ^{[1
]}

Kumomi, Hideya ^{[1
]}

Nomura, Kenji ^{[2
]}

Kamiya, Toshio ^{[3
]}

Hirano, Masahiro ^{[2
]}

Hosono, Hideo ^{[3
]}

机构：

[1] Canon Inc, Canon Res Ctr, Tokyo 1468501, Japan

[2] Tokyo Inst Technol, Frontier Collaborative Res Ctr, Japan Sci & Technol Agcy, ERATO,SORTS, Tokyo, Japan

[3] Tokyo Inst Technol, Mat & Struct Lab, Tokyo, Japan

来源：

JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY | 2007年 / 15卷 / 11期

关键词：

thin-film transistors (TFTs); amorphous-oxide semiconductors; uniformity; sputtering; ring oscillators; organic light-emitting diodes (OLEDs);

D O I：

10.1889/1.2812992

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-performance and excellent-uniformity thin-film transistors (TFTs) having bottom-gate structures are fabricated using an amorphous indium-gallium-zinc-oxide (IGZO) film and an amorphous-silicon dioxide film as the channel layer and the gate insulator layer, respectively. All of the 94 TFTs fabricated with an area 1 cm(2) show almost identical transfer characteristics: the average saturation mobility is 14.6 cm(2)/(V-sec) with a small standard deviation of 0.11 cm(2)/(V-sec). A five-stage ring-oscillator composed of these TFTs operates at 410 kHz at an input voltage of 18 V. Pixel-driving circuits based on these TFTs are also fabricated with organic light-emitting diodes (OLED) which are monolithically integrated on the same substrate. It is demonstrated that light emission from the OLED cells can be switched and modulated by a 120-Hz ac signal input. Amorphous-IGZO-based TFTs are prominent candidates for building blocks of large-area OLED-display electronics.

引用

页码：915 / 921

页数：7

共 10 条

[1] Fast polymer integrated circuits [J].