Fast thin-film transistor circuits based on amorphous oxide semiconductor

被引：90

作者：

Ofuji, Masato ^{[1
]}

Abe, Katsumi

Shimizu, Hisae

Kaji, Nobuyuki

Hayashi, Ryo

Sano, Masafumi

Kumomi, Hideya

Nomura, Kenji

Kamiya, Toshio

Hosono, Hideo

机构：

[1] Canon Inc, Canon Res Ctr, Tokyo 1468501, Japan

[2] Tokyo Inst Technol, Frontier Collaborat Res Ctr, Japan Sci & Technol Agcy, SORST,ERATO, Yokohama, Kanagawa 2268503, Japan

[3] Tokyo Inst Technol, Mat & Struct Lab, Yokohama, Kanagawa 2268503, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2007年 / 28卷 / 04期

关键词：

amorphous semiconductors; oxide semiconductors; ring oscillators (ROs); sputtering; thin-film transistors (TFTs);

D O I：

10.1109/LED.2007.893223

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Five-stage ring oscillators (ROs) composed of amorphous In/Ga/Zn/O (a-IGZO) channel thin-film transistors (TFTs) with the channel lengths of 10 mu m were fabricated on a glass substrate. The a-IGZO layer was deposited by RF magnetron sputtering onto the unheated substrate. The RO operated at 410 kHz (the propagation delay of 0.24 mu s/stage), when supplied with an external voltage of +18 V. This is the fastest integrated circuit based on oxide-semiconductor channel TFTs to date that operates faster than the ROs using conventional hydrogenated amorphous silicon TFTs and organic TFTs.

引用

页码：273 / 275

页数：3

共 13 条

[1] High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer [J].