Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films

被引：251

作者：

Nomura, K

Kamiya, T

Ohta, H

Ueda, K

Hirano, M

Hosono, H

机构：

[1] JST, ERATO, Hosono Transparent Electroact Mat, Kawasaki, Kanagawa 2130012, Japan

[2] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 11期

关键词：

D O I：

10.1063/1.1788897

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated carrier transport in a crystalline oxide semiconductor InGaO3(ZnO)(5) using single-crystalline thin films. When carrier concentration is less than 2x10(18) cm(-3), logarithm of electrical conductivity decreases in proportion to T (-1/4) and room-temperature Hall mobility was as low as similar to1 cm(2)(V s)(-1). When carrier concentration was increased to 4x10(18) cm(-3), the conduction mechanism changed to degenerate conduction and room-temperature Hall mobility was steeply increased to >10 cm(2)(Vs)(-1), showing metal-insulator transition behavior. These results are explained by percolation conduction over distribution of potential barriers formed around conduction band edge. The potential distribution is a consequence of potential modulation originating from random distribution of Ga3+ and Zn2+ ions in the crystal structure of InGaO3(ZnO)(5). (C) 2004 American Institute of Physics.

引用

页码：1993 / 1995

页数：3

共 22 条

[1] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J].