Fabrication of transparent p-n heterojunction thin film diodes based entirely on oxide semiconductors

被引：181

作者：

Kudo, A

Yanagi, H

Ueda, K

Hosono, H

Kawazoe, H

Yano, Y

机构：

[1] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa, Japan

[2] TDK Corp, R&D Ctr, Ichikawa, Chiba 2720026, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 18期

关键词：

D O I：

10.1063/1.125171

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

All oxide-based, transparent polycrystalline p-n heterojunctions on a glass substrate were fabricated. The structure of the diode was n(+)-ZnO electrode/n-ZnO/p-SrCu2O2/In2-xSnxO3 electrode on the substrate. The contact between the n- and p-type semiconducting oxides was found to be rectifying. The ratio of forward current to the reverse current exceeded 80 within the range of applied voltages of -1.5 to +1.5 V and the estimated diode factor (n value) was 1.62. The diode structure was fabricated on a glass plate with the total thickness of 1.3 mu m and possessed an optical transmission of 70%-80% in the visible region. (C) 1999 American Institute of Physics. [S0003-6951(99)03744-4].

引用

页码：2851 / 2853

页数：3

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