Silicon nanowire detectors showing phototransistive gain

被引：95

作者：

Zhang, Arthur ^{[1
]}

You, Sifang ^{[2
]}

Soci, Cesare ^{[1
]}

Liu, Yisi ^{[3
]}

Wang, Deli ^{[1
]}

Lo, Yu-Hwa ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, Jacobs Sch Engn, La Jolla, CA 92093 USA

[2] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA

[3] Agiltron Inc, Woburn, MA 01801 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 12期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2990639

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nanowire photodetectors are shown to function as phototransistors with high sensitivity. Due to small lateral dimensions, a nanowire detector can have low dark current while showing large phototransistive gain. Planar and vertical silicon nanowire photodetectors fabricated in a top-down approach using an etching process show a phototransistive gain above 35 000 at low light intensities. Simulations show that incident light can be waveguided into vertical nanowires resulting in up to 40 times greater external quantum efficiency above their physical fill factor. Vertical silicon nanowire phototransistors formed by etching are attractive for low light level detection and for integration with silicon electronics. (C) 2008 American Institute of Physics.

引用

页数：3

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