Passivation of defects at the SrTiO3/Si interface with H and H2

被引：2

作者：

Browne, RJ

Ogryzlo, EA ^{[1
]}

Eisenbeiser, K

Yu, Z

Droopad, R

Overgaard, C

机构：

[1] Univ British Columbia, AMPEL, Vancouver, BC V6T 1Z4, Canada

[2] Motorola Labs, Phys Sci Res Labs, Tempe, AZ 85284 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 15期

关键词：

Interface states - Molecular physics - Carrier concentration - Strontium titanates - Passivation - Silicon - Titanium oxides;

D O I：

10.1063/1.1472475

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A silicon surface covered with similar to150 Angstrom of strontium titanium oxide was exposed to both atomic and molecular hydrogen at temperatures between 20 and 300 degreesC. A rf probe was used to continuously monitor changes in charge-carrier recombination centers at the SrTiO3/Si interface by following the steady-state photogenerated carrier concentration in the silicon. Independent passivation of interfacial defects was observed by both atomic and molecular hydrogen. (C) 2002 American Institute of Physics.

引用

页码：2699 / 2700

页数：2

共 10 条

[1] KINETICS OF H-2 PASSIVATION OF PB CENTERS AT THE (111) SI-SIO2 INTERFACE [J].