Electroluminescence from amorphous silicon/crystalline silicon solar cells and its temperature dependence

被引：1

作者：

Brueggemann, Rudolf ^{[1
]}

机构：

[1] Carl von Ossietzky Univ Oldenburg, Inst Phys, D-26111 Oldenburg, Germany

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 6 | 2012年 / 9卷 / 06期

关键词：

electroluminescence; heterojunction; interface defects; silicon solar cell; BAND-EDGE ELECTROLUMINESCENCE; LUMINESCENCE; RADIATION; LAW;

D O I：

10.1002/pssc.201100766

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The quality of the amorphous silicon/crystalline silicon interface is decisive for efficient operation of amorphous silicon/crystalline silicon heterojunction solar cells. We investigate the electroluminescence from these heterojunction solar cells for a variation of interface properties. We detail electroluminescence results from temperature-dependent simulations which show that the electroluminescence yield at constant current density is almost temperature-independent for lower interface-defect densities while for higher interface-defect densities the electroluminescence yield decreases with decreasing temperature. In contrast to the influence of the front interface which does not change the spectral shape, the related inhomogeneous carrier profile distorts the spectrum so that conclusions can be drawn on the rear interface properties. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1496 / 1498

页数：3

共 14 条

[1]

Bauer GH, 2004, PHYS STATUS SOLIDI C, V1, P1308, DOI 10.1002/pssc.200304314

[2]

Brüggemann R, 2007, J OPTOELECTRON ADV M, V9, P77

[3] Analysis of electroluminescence from silicon heterojunction solar cells [J].

Brueggemann, R. ;

Olibet, S. .

PROCEEDINGS OF INORGANIC AND NANOSTRUCTURED PHOTOVOLTAICS, 2010, 2 (01) :19-26

[4] Kirchhoff's generalised law applied to amorphous silicon/crystalline silicon heterostructures [J].

Brueggemann, R. .

PHILOSOPHICAL MAGAZINE, 2009, 89 (28-30) :2519-2529

[5] Band-edge electroluminescence from amorphous/crystalline silicon heterostructure solar cells [J].

Fuhs, W. ;

Laades, A. ;

Maydell, K. v. ;

Stangl, R. ;

Gusev, O. B. ;

Terukov, E. I. ;

Kazitsyna-Baranovski, S. ;

Weiser, G. .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (9-20) :1884-1887

[6] OPTICAL-PROPERTIES OF INTRINSIC SILICON AT 300 K [J].

GREEN, MA ;

KEEVERS, MJ .

PROGRESS IN PHOTOVOLTAICS, 1995, 3 (03) :189-192

[7]

McFarlane G.G., 1958, PHYS REV, V111, P1245

[8]

ROSCH M, 1998, 2 WORLD C PHOT SOL E, P946

[9]

ROSCH M, 2000, MATER RES SOC S P, V557, P463

[10] VERIFICATION OF A GENERALIZED PLANCK LAW FOR LUMINESCENCE RADIATION FROM SILICON SOLAR-CELLS [J].

SCHICK, K ;

DAUB, E ;

FINKBEINER, S ;

WURFEL, P .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1992, 54 (02) :109-114

← 1 2 →