OPTICAL-PROPERTIES OF INTRINSIC SILICON AT 300 K

被引：1109

作者：

GREEN, MA

KEEVERS, MJ

机构：

[1] Centre for Photovoltaic Devices and Systems, University of New South Wales, Sydney

来源：

PROGRESS IN PHOTOVOLTAICS | 1995年 / 3卷 / 03期

关键词：

D O I：

10.1002/pip.4670030303

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

An updated tabulation is presented of the optical properties of intrinsic silicon relevant to solar cell calculations. The absorption coefficient, refractive index and extinction coefficient at 300 K are tabulated over the 0.25-1.45 mu m wavelength range at 0.01 mu m intervals.

引用

页码：189 / 192

页数：4

共 15 条

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