Self-aligned CoSi2 for 0.18 μm and below

被引:41
作者
Maex, K [1 ]
Lauwers, A
Besser, P
Kondoh, E
de Potter, M
Steegen, A
机构
[1] IMEC, B-3001 Louvain, Belgium
[2] Katholieke Univ Leuven, INSYS, Louvain, Belgium
[3] Adv Micro Devices, Berkeley, CA 94720 USA
关键词
D O I
10.1109/16.772509
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
CoSi2 is being used commonly for the advanced IC technologies, There are several process choices to be made for the formation of a high yielding and reproducible silicide, In this paper the various CoSi2 technologies will be discussed. The scalability of the process of record, the Co/Ti(cap) process will be presented for 0.18 mu m and below.
引用
收藏
页码:1545 / 1550
页数:6
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