Self-aligned CoSi2 for 0.18 μm and below

被引：41

作者：

Maex, K ^{[1
]}

Lauwers, A

Besser, P

Kondoh, E

de Potter, M

Steegen, A

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, INSYS, Louvain, Belgium

[3] Adv Micro Devices, Berkeley, CA 94720 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1999年 / 46卷 / 07期

关键词：

D O I：

10.1109/16.772509

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

CoSi2 is being used commonly for the advanced IC technologies, There are several process choices to be made for the formation of a high yielding and reproducible silicide, In this paper the various CoSi2 technologies will be discussed. The scalability of the process of record, the Co/Ti(cap) process will be presented for 0.18 mu m and below.

引用

页码：1545 / 1550

页数：6

共 14 条

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